基于随机存取存储器的温度影响和编程算法

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457132

E. Pérez, A. Grossi, C. Zambelli, M. K. Mahadevaiah, P. Olivo, C. Wenger

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引用次数: 4

摘要

本文研究了成形温度对铪基随机存储器阵列可靠性的影响。在成形过程中，应用了25°C至150°C的广泛高温。在室温和150°C下分别进行了耐久性和保持性测试。优化的增量步进脉冲和验证算法(ISPVA)被用于写操作，以减少细胞间的可变性。比较HfO2和Hf1-$_\ mathm {1-x}\mathbf{Al}\mathbf{xAl} _\ mathbf{x}} \mathbf{O} _{\mathbf {y}}$RRAM阵列的电性能。

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Temperature impact and programming algorithm for RRAM based memories

In this paper, the impact of the forming temperature on the reliability of Hafnium-based RRAM arrays has been investigated. A wide range of high temperatures from 25 °C to 150 °C during the forming operations have been applied. Endurance and retention tests have been performed at room temperature and at 150 °C, respectively. The optimized Incremental Step Pulse and Verify Algorithm (ISPVA) has been used for write operations in order to reduce the cell-to-cell variability. The electricalperformance of HfO2 and Hf1-$_\mathrm{1-x}\mathbf{Al}\mathbf{xAl} _{\mathbf {x}} \mathbf {O} _{\mathbf {y}}$RRAM arrays will be compared.

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来源期刊

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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