减少介电充电的射频MEMS电容开关

IF 1.5 2区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2018-12-14 DOI:10.1117/1.JMM.17.4.045001

Khushbu Mehta, D. Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, M. Kaur, Prem Kumar, K. Rangra

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引用次数: 1

摘要

摘要开关中介电电荷的存在会引起拉入电压的粘滞和漂移。提出了一种减轻射频MEMS开关充电问题的设计方案。制备了一种射频MEMS电容开关，并对其进行了表征。测量开关的上拉电压为17v，上拉电压< 20v，开关时间为78 μs。开关的插入损耗和隔离是通过在室温下从0到15 dBm的射频功率变化来测量的。该开关的插入损耗优于0.1 dB，隔离优于17db。该装置的谐振频率为8.4 kHz。该开关已完成6亿次循环。

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Reduced dielectric charging RF MEMS capacitive switch

Abstract. The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20 V and pull-up voltage is 17 V with a switching time of 78 μs. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles.

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来源期刊

Journal of Micro/Nanolithography, MEMS, and MOEMS Multiple-

CiteScore

3.40

自引率

30.40%

发文量

审稿时长

6-12 weeks