可动波导直接接触MEMS开关的高功率处理能力

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. Pub Date : 2005-06-05 DOI:10.1109/SENSOR.2005.1497491

S. Soda, Y. Yoshida, M. Hangai, T. Nishino, S. Izuo, M. Taguchi

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引用次数: 2

摘要

介绍了采用直接接触式MEMS开关的高功率处理能力的特点。开关有一个可移动波导，制造在硅腔上。制备了两种不同接触点数量的MEMS开关。在热开关模式下的高功率处理实验中，在7 GHz射频信号中，多触点开关在1.6 W时失效，而单触点开关在2.4 W时成功。根据输入功率与插入损耗的关系，从接触力和表面粗糙度的角度考虑了这些结果。

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High power handling capability of movable-waveguide direct contact MEMS switches

The authors presented the characteristics of high power handling capability with direct contact MEMS switches. The switch has a movable-waveguide, fabricated on a silicon cavity. Two types of MEMS switches with different number of contact points were fabricated. In high power handling experiments with hot switching mode, a multiple-contact type switch failed at 1.6 W in 7 GHz RF signal, while a single-contact type switch was succeeded up to 2.4 W. These results were considered from the viewpoint of contact force and surface asperities according to the relation between input power and insertion loss.

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来源期刊

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.

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