远程等离子体增强化学气相沉积系统的设计，用于含锡族iv合金的生长

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2020-11-09 DOI:10.1116/6.0000406

G. Grzybowski, M. Ware, A. Kiefer, B. Claflin

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引用次数: 3

摘要

由于Sn在这两种元素中的溶解度较低，因此制备含Sn的Ge和/或Si的族iv合金具有挑战性。在这里，我们描述了一个远程等离子体增强化学气相沉积(RPECVD)系统，旨在合成这种族iv合金。在280 ~ 410°C的温度范围内，在Si(001)衬底上利用远端He等离子体沉积了Ge、Ge1−ySiy、Ge1−xSnx和Ge1−x−ySiySnx薄膜，并向下游注入了SnCl4、SiH4和/或GeH4前驱体的混合物。利用x射线衍射、透射电子显微镜和x射线光电子能谱对膜的组成和结构性能进行了表征。发现它们是结晶的，与衬底取向，并且由于形成约5 nm厚的界面层而具有高密度的边缘位错和层错而几乎松弛。

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Design of a remote plasma-enhanced chemical vapor deposition system for growth of tin containing group-IV alloys

Group-IV alloys of Ge and/or Si with Sn are challenging to prepare due to the low solubility of Sn in both of these elements. Herein, we describe a remote plasma-enhanced chemical vapor deposition (RPECVD) system designed to synthesize such group-IV alloys. Thin films of Ge, Ge1−ySiy, Ge1−xSnx, and Ge1−x−ySiySnx were deposited in the range of 280−410 °C on Si (001) substrates utilizing a remote He plasma with downstream injected mixtures of SnCl4, SiH4, and/or GeH4 precursors. The composition and structural properties of these RPECVD films were characterized with x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. They were found to be crystalline, oriented with the substrate, and nearly relaxed due to the formation of an ∼5 nm thick interface layer with a high density of edge dislocations and stacking faults.

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Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

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