硅隧道场效应管在硅mosfet上温度稳定性的实验论证

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243315

S. Migita, K. Fukuda, Y. Morita, H. Ota

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引用次数: 19

摘要

在相同的SOI晶圆上，实验比较了隧道场效应晶体管(TFET)和MOSFET的温度依赖性。仿真验证了实验结果的有效性。结果表明，与硅- mosfet相比，硅- tfet的VTH位移和关断电流增量随温度的变化较小。在超低功耗超大规模集成电路中，ttfet的温度稳定性具有广阔的应用前景。

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Experimental demonstration of temperature stability of Si-tunnel FET over Si-MOSFET

Temperature dependences of tunnel field-effect transistor (TFET) and MOSFET were experimentally compared on the same SOI wafer. Validity of the TFET result was corroborated by simulation. It is demonstrated that VTH shift and off-current increment of Si-TFET with temperature were smaller in comparison with Si-MOSFET. Temperature stability of TFET is promising for ultra-low power VLSI.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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