氮化钪铝作为大功率晶体管的新兴材料

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457157

M. Hardy, D. Meyer, N. Nepal, B. Downey, D. Scott Katzer, D. Storm

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引用次数: 4

摘要

将一种新型的超宽带隙材料ScAlN作为iii -氮化物高电子迁移率晶体管的层材料，有可能提高毫米波频率下的输出功率。通过分子束外延可以生长出晶格匹配的ScAlN，具有较高的界面质量和相纯度。当ScAlN势垒厚度在3-25 nm范围内变化时，薄片电荷密度为2.0-3.2 × 1013 cm - 2，电子迁移率高达1060 cm2/V·s

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Scandium Aluminum Nitride as an Emerging Material for High Power Transistors

Incorporating a novel ultra-wide bandgap material, ScAlN, as the layer material in III-nitride highelectron-mobility transistors has the potential to improve output power at millimeter wave frequencies. Lattice-matched ScAlN can be grown by molecular beam epitaxy with high interfacial quality and phase purity. Varying the ScAlN barrier thickness from 3–25 nm results in sheet charge densities of 2.0–3.2 × 10¹³ cm⁻²and electron mobilities as high as 1060 cm2/V·s

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2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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