功能MIM隧道二极管的纳米转移印刷

M. Bareiss, B. Weiler, D. Kalblein, U. Zschieschang, H. Klauk, G. Scarpa, B. Fabel, P. Lugli, W. Porod
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引用次数: 4

摘要

纳米二极管在探测器、通信和能量收集方面显示出巨大的应用潜力。在这项工作中,我们将重点放在纳米转移印刷(nTP)上,以在广泛的领域制造纳米级二极管。使用温度增强工艺,数百万个二极管在一个步骤中被转移打印。通过导电原子力显微镜(c-AFM)测量,我们展示了功能MIM二极管的可靠转移。量子力学隧穿被确定为金属-氧化物-金属结的主要传导机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nano-transfer printing of functioning MIM tunnel diodes
Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to fabricate nm-scale diodes over extensive areas. Using a temperature-enhanced process, several millions of diodes were transfer-printed in one single step. We show the reliable transfer of functioning MIM diodes, which were electrically characterized by conductive Atomic Force Microscopy (c-AFM) measurements. Quantum-mechanical tunneling was determined to be the main conduction mechanism across the metal-oxide-metal junction.
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