分子动力学模拟揭示了晶圆减薄过程的亚表面损伤机理

Xinxin Lin, F. Zhu, Liping He, Yongjun Pan, Jiaquan Tao, K. Duan
{"title":"分子动力学模拟揭示了晶圆减薄过程的亚表面损伤机理","authors":"Xinxin Lin, F. Zhu, Liping He, Yongjun Pan, Jiaquan Tao, K. Duan","doi":"10.1109/ICEPT.2016.7583166","DOIUrl":null,"url":null,"abstract":"Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer thinning, a deeper understanding of the existing theory is absolutely necessary.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"35 1","pages":"417-420"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Subsurface damage mechanism of wafer thinning process revealed by molecular dynamics simulation\",\"authors\":\"Xinxin Lin, F. Zhu, Liping He, Yongjun Pan, Jiaquan Tao, K. Duan\",\"doi\":\"10.1109/ICEPT.2016.7583166\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer thinning, a deeper understanding of the existing theory is absolutely necessary.\",\"PeriodicalId\":6881,\"journal\":{\"name\":\"2016 17th International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"35 1\",\"pages\":\"417-420\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT.2016.7583166\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2016.7583166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

三维集成电路作为传统二维工艺的延伸,被认为是延续摩尔定律的最佳选择。三维集成电路尺寸的极端小型化和结构的复杂组合对晶圆减薄等相关技术提出了更高的要求。在寻找新的晶圆减薄原理的过程中,对现有理论的深入了解是绝对必要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Subsurface damage mechanism of wafer thinning process revealed by molecular dynamics simulation
Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer thinning, a deeper understanding of the existing theory is absolutely necessary.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信