超尺度标准电池上横向纳米片的功率性能权衡

M. Bardon, Y. Sherazi, D. Jang, D. Yakimets, P. Schuddinck, R. Baert, H. Mertens, L. Mattii, B. Parvais, A. Mocuta, D. Verkest
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引用次数: 26

摘要

本文利用相关的逻辑基准和功耗感知指标,研究了基于横向纳米片的标准电池在3nm技术节点目标上缩小到4.5个金属道的性能。4.5T细胞的细胞布局和寄生性对纳米片的几何形状有很强的限制。优化后的纳米片仍然可以比finfet高出9到20%的频率,具体取决于电路环境,达到3nm节点目标。通过启用设备级助推器,预计性能将提高21%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power-performance Trade-offs for Lateral NanoSheets on Ultra-Scaled Standard Cells
In this paper, the performance of standard cells scaled down to 4.5 metal tracks based on Lateral NanoSheets is investigated for 3nm technology node targets using relevant logic benchmarks and power-aware metrics. The cell layout and parasitics in 4.5T cells set strong constraints on the NanoSheets geometry. The optimized NanoSheets could still outperform FinFETs by 9 to 20% frequency depending on circuit context, reaching 3nm node targets. An extra 21% performance improvement is expected with device level boosters enablement.
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