3-D叠模:现在还是未来?

S. Bansal, J. Rey, A. Yang, Myung-Soo Jang, L. C. Lu, P. Magarshack, P. Marchal, R. Radojcic
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引用次数: 2

摘要

通过传统CMOS缩放来延续摩尔定律正变得具有挑战性。3D封装与3D硅通孔(TSV)互连显示出使用成熟硅技术扩展规模的希望,为“超越摩尔”提供了另一条途径。两年前,一个不断出现的大问题是“为什么要3D?”今天,随着我们推进这项技术的具体实施,现在的问题是“何时3D?”和“如何3D?”有相当多的勇敢的人已经采用了这种颠覆性的互联技术,并正在投资于它,以从中获益。然而,对于许多人来说,挥之不去的问题仍然是“我们到了吗?”“是现在还是未来?”本次座谈会汇集了3D封装与3D TSV互连领域的主要思想领袖,告诉我们他们如何看待3D IC在未来一年的发展,以及TSV在实际设计中面临的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3-D stacked die: Now or future?
The continuation of Moore's law by conventional CMOS scaling is becoming challenging. 3D Packaging with 3D through silicon vias (TSV) interconnects is showing promise for extending scaling using mature silicon technology, providing another path towards the "More than Moore". Two years ago, the big unceasing question was "Why 3D?" Today, as we move forward with the concrete implementation of the technology, the questions are now "When 3D?" and "How 3D?" There are quite a few brave souls who have taken this disruptive interconnect technology and are investing in it today to gain benefit from it. However, for many the lingering questions remain "Are we there yet?" "Is it now or the future?" This panel brings together key thought leaders in the area of 3D Packaging with 3D TSV interconnects to tell us how they see 3D IC shaping up in the coming year(s) and the challenges that lie ahead associated with TSV in practical design.
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