基于外延Si穿孔的双极RRAM选择器

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6256979

P. Bafna, P. Karkare, S. Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly

{"title":"基于外延Si穿孔的双极RRAM选择器","authors":"P. Bafna, P. Karkare, S. Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly","doi":"10.1109/DRC.2012.6256979","DOIUrl":null,"url":null,"abstract":"Resistive RAM is a very promising candidate for high density non-volatile memory. Although bipolar operation has been shown to work at lower current (essential for low power, mobile computing) [1], a suitable selector device that delivers high current density and high on/off current ratio is challenging [2–4]. We demonstrate a 4F2 bipolar selector device based on the punch-through mechanism. An npn vertical junction device fabricated using in-situ doped epitaxial silicon is presented. Superior on-current density (Jon=1MA/cm2) and high on-off current ratio (Ion/Ioff) of 300–5000 is experimentally demonstrated. TCAD simulations based performance, variability and scalability are presented.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"4 1","pages":"115-116"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Epitaxial Si punch-through based selector for bipolar RRAM\",\"authors\":\"P. Bafna, P. Karkare, S. Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly\",\"doi\":\"10.1109/DRC.2012.6256979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive RAM is a very promising candidate for high density non-volatile memory. Although bipolar operation has been shown to work at lower current (essential for low power, mobile computing) [1], a suitable selector device that delivers high current density and high on/off current ratio is challenging [2–4]. We demonstrate a 4F2 bipolar selector device based on the punch-through mechanism. An npn vertical junction device fabricated using in-situ doped epitaxial silicon is presented. Superior on-current density (Jon=1MA/cm2) and high on-off current ratio (Ion/Ioff) of 300–5000 is experimentally demonstrated. TCAD simulations based performance, variability and scalability are presented.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"4 1\",\"pages\":\"115-116\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

电阻式RAM是一种非常有前途的高密度非易失性存储器。虽然双极操作已被证明可以在较低的电流(对于低功耗、移动计算至关重要)下工作，但一个合适的选择器设备可以提供高电流密度和高通/关电流比，这是一个挑战[2-4]。我们展示了一种基于穿孔机制的4F2双极选择器装置。介绍了一种利用原位掺杂外延硅制备的npn垂直结器件。实验证明了优越的通流密度(Jon=1MA/cm2)和300-5000的高通断电流比(Ion/Ioff)。提出了基于性能、可变性和可扩展性的TCAD仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Epitaxial Si punch-through based selector for bipolar RRAM

Resistive RAM is a very promising candidate for high density non-volatile memory. Although bipolar operation has been shown to work at lower current (essential for low power, mobile computing) [1], a suitable selector device that delivers high current density and high on/off current ratio is challenging [2–4]. We demonstrate a 4F2 bipolar selector device based on the punch-through mechanism. An npn vertical junction device fabricated using in-situ doped epitaxial silicon is presented. Superior on-current density (Jon=1MA/cm2) and high on-off current ratio (Ion/Ioff) of 300–5000 is experimentally demonstrated. TCAD simulations based performance, variability and scalability are presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

70th Device Research Conference

自引率

0.00%

发文量