新型低偏置电压二极管，采用非对称阈值电压单极管场效应晶体管，用于要求低电压工作的下一代器件

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175875

S. Ueno, H. Furuta, Y. Okumura, T. Eimori, Y. Inoue

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引用次数: 0

摘要

利用阈值电压不对称的MONOS FET，提出了一种低偏置电压低于0.6V的新型二极管。通过抑制关断电流和反漏电流，可以实现0.3V的偏置电压。该技术为下一代低电压工作电路提供了良好的特性。

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Novel low offset voltage diode using asymmetric threshold voltage MONOS-FET for next generation devices demanding low voltage operation

Novel diode with low offset voltage below 0.6V is proposed by using MONOS FET with asymmetric threshold voltage. Offset voltage of 0.3V can be achieved by suppressing off state current and reverse leakage current. This technique gives promising characteristics for next generation circuits with low voltage operation.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

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