用于三维集成应用的Sn/In-Cu互连的低温键合

R. Tzeng, Yan-Pin Huang, Y. Chien, C. Chuang, W. Hwang, J. Chiou, M. Shy, Teu-Hua Lin, Kou-Hua Chen, C. Chiu, H. Tong, Kuan-Neng Chen
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引用次数: 7

摘要

提出并研究了一种Sn/In复合焊料与Cu互连的低温键合工艺。在键合互连中形成的金属间化合物可以在以下过程中很好地存活。在低温下结合的Sn/ in - cu互连都具有优异的电性能和高的耐多重电流应力,在3D应用中显示出巨大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low temperature bonding of Sn/In-Cu interconnects for three-dimensional integration applications
A low temperature bonding technology of Sn/In composite solder bonded to Cu interconnect is proposed and investigated. The intermetallic compounds formed in the bonded interconnects can survive well in the following process. The Sn/In-Cu interconnects bonded at low temperature all exhibit excellent electrical performance and high resistance to multiple current stressing, showing a great potential in 3D applications.
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