{"title":"具有极高分辨率的CMOS磁锁存器","authors":"Z.Q. Li, X.W. Sun","doi":"10.1109/IEDM.2002.1175984","DOIUrl":null,"url":null,"abstract":"A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"21 1","pages":"909-912"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A CMOS magnetic latch with extremely high resolution\",\"authors\":\"Z.Q. Li, X.W. Sun\",\"doi\":\"10.1109/IEDM.2002.1175984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"21 1\",\"pages\":\"909-912\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS magnetic latch with extremely high resolution
A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.
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