基于垂直DBR结构的光子MEMS高纵横比纳米结构(HARNS

F. Marty, B. Saadany, T. Bourouina, Y. Mita, T. Shibata
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引用次数: 15

摘要

采用深度反应离子刻蚀法制备了高纵横比纳米结构(HARNS),其纵横比高达107。侧壁表面粗糙度降低到峰谷差小于20 nm的水平。这些技术进步被应用于光在平面内自由空间传播的光子MEMS。作为一个例子,给出了一个法布里-珀罗腔。它使用垂直分布布拉格反射器(DBRs),它由由小气隙分隔的薄硅壁组成,宽度分别是硅和空气中光波长的四分之一的偶数倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High aspect ratio nano-structures (HARNS) for photonic MEMS based on vertical DBR architecture
High aspect ratio nano-structures (HARNS), having an aspect ratio of up to 107, were fabricated by DRIE (deep reactive ion etching). Sidewall surface roughness was reduced to a level less than 20 nm peak-to-valley. These technological advances are applied to photonic MEMS based on in-plane, free-space propagation of light. As an illustration, a Fabry-Perot cavity is presented. It uses vertical distributed Bragg reflectors (DBRs), which consist of thin silicon walls separated by small air gaps, the widths being an even multiple of quarter wavelengths of light in silicon and in air, respectively.
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