非易失性存储器技术中减少位写入的压缩体系结构

David B. Dgien, Poovaiah M. Palangappa, N. A. Hunter, Jiayin Li, K. Mohanram
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引用次数: 48

摘要

提出了一种基于压缩的新型非易失性存储器(NVMs)位写减少结构。减少位写有许多实际的好处,包括更低的写延迟、更低的动态能量和增强的持久性。所提出的架构集成到NVM模块中,依赖于(i)频繁模式压缩解压引擎,(ii)减少比特写入的比较器,以及(iii)机会磨损均衡器,通过减少峰值比特写入/单元来扩展写入和增强内存耐用性。SPEC CPU2006基准测试的基于跟踪的模拟显示,原始比特写入平均减少了20倍,这相当于比最先进的方法提高了2-3倍,峰值单元比特写入减少了27%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Compression architecture for bit-write reduction in non-volatile memory technologies
This paper proposes a compression-based architecture for bit-write reduction in emerging non-volatile memories (NVMs). Bit-write reduction has many practical benefits, including lower write latency, lower dynamic energy, and enhanced endurance. The proposed architecture, which is integrated into the NVM module, relies on (i) a frequent pattern compression-decompression engine, (ii) a comparator to reduce bit-writes, and (iii) an opportunistic wear leveler to spread writes and enhance memory endurance by reducing the peak bit-writes/cell. Trace-based simulations of the SPEC CPU2006 benchmarks show a 20× reduction in raw bit-writes on average, which corresponds to a 2-3× improvement over state-of-the-art methods and a 27% reduction in peak cell bit-writes.
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