David B. Dgien, Poovaiah M. Palangappa, N. A. Hunter, Jiayin Li, K. Mohanram
{"title":"非易失性存储器技术中减少位写入的压缩体系结构","authors":"David B. Dgien, Poovaiah M. Palangappa, N. A. Hunter, Jiayin Li, K. Mohanram","doi":"10.1145/2770287.2770300","DOIUrl":null,"url":null,"abstract":"This paper proposes a compression-based architecture for bit-write reduction in emerging non-volatile memories (NVMs). Bit-write reduction has many practical benefits, including lower write latency, lower dynamic energy, and enhanced endurance. The proposed architecture, which is integrated into the NVM module, relies on (i) a frequent pattern compression-decompression engine, (ii) a comparator to reduce bit-writes, and (iii) an opportunistic wear leveler to spread writes and enhance memory endurance by reducing the peak bit-writes/cell. Trace-based simulations of the SPEC CPU2006 benchmarks show a 20× reduction in raw bit-writes on average, which corresponds to a 2-3× improvement over state-of-the-art methods and a 27% reduction in peak cell bit-writes.","PeriodicalId":6519,"journal":{"name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"16 1","pages":"51-56"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":"{\"title\":\"Compression architecture for bit-write reduction in non-volatile memory technologies\",\"authors\":\"David B. Dgien, Poovaiah M. Palangappa, N. A. Hunter, Jiayin Li, K. Mohanram\",\"doi\":\"10.1145/2770287.2770300\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a compression-based architecture for bit-write reduction in emerging non-volatile memories (NVMs). Bit-write reduction has many practical benefits, including lower write latency, lower dynamic energy, and enhanced endurance. The proposed architecture, which is integrated into the NVM module, relies on (i) a frequent pattern compression-decompression engine, (ii) a comparator to reduce bit-writes, and (iii) an opportunistic wear leveler to spread writes and enhance memory endurance by reducing the peak bit-writes/cell. Trace-based simulations of the SPEC CPU2006 benchmarks show a 20× reduction in raw bit-writes on average, which corresponds to a 2-3× improvement over state-of-the-art methods and a 27% reduction in peak cell bit-writes.\",\"PeriodicalId\":6519,\"journal\":{\"name\":\"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)\",\"volume\":\"16 1\",\"pages\":\"51-56\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"48\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2770287.2770300\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2770287.2770300","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compression architecture for bit-write reduction in non-volatile memory technologies
This paper proposes a compression-based architecture for bit-write reduction in emerging non-volatile memories (NVMs). Bit-write reduction has many practical benefits, including lower write latency, lower dynamic energy, and enhanced endurance. The proposed architecture, which is integrated into the NVM module, relies on (i) a frequent pattern compression-decompression engine, (ii) a comparator to reduce bit-writes, and (iii) an opportunistic wear leveler to spread writes and enhance memory endurance by reducing the peak bit-writes/cell. Trace-based simulations of the SPEC CPU2006 benchmarks show a 20× reduction in raw bit-writes on average, which corresponds to a 2-3× improvement over state-of-the-art methods and a 27% reduction in peak cell bit-writes.