肖特基势垒碳纳米管场效应晶体管中的短沟道效应

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175834

J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, P. Avouris

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引用次数: 30

摘要

本研究展示了垂直尺度碳纳米管场效应晶体管(cnfet)的新成果，特别是在短沟道效应方面。我们展示了明确的证据，表明最先进的cnfet表现为肖特基势垒(SB)晶体管，并且SB- cnfet表现出非常明显的缩放行为。本文首次讨论了cnfet的相关标度规则，该规则必须用于确保所需的器件工作和避免短通道效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors

This study shows new results on vertically scaled carbon nanotube field-effect transistors (CNFETs) focusing in particular on short-channel effects. We show clear evidence that state-of-the-art CNFETs behave as Schottky barrier (SB) transistors and that SB-CNFETs exhibit a very distinct scaling behavior. The relevant scaling rules that have to be applied to ensure the desired device operation and to avoid short-channel-like effects of CNFETs are discussed for the first time.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

发文量