{"title":"一维纳米CD线宽标准生产线线宽和线边粗糙度的测量","authors":"G. Han, Z. Jiang, W. Jing, M.Z. Zhu","doi":"10.1109/NANO.2007.4601299","DOIUrl":null,"url":null,"abstract":"One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"2 1","pages":"769-772"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines\",\"authors\":\"G. Han, Z. Jiang, W. Jing, M.Z. Zhu\",\"doi\":\"10.1109/NANO.2007.4601299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.\",\"PeriodicalId\":6415,\"journal\":{\"name\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"volume\":\"2 1\",\"pages\":\"769-772\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2007.4601299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines
One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.