一维纳米CD线宽标准生产线线宽和线边粗糙度的测量

G. Han, Z. Jiang, W. Jing, M.Z. Zhu
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引用次数: 1

摘要

采用多层薄膜沉积技术制备了一维纳米CD (NCD)线宽标准生产线。在传统的电子束蒸发系统中,系统地在硅衬底上沉积了Ti/SiO2多层薄膜。然后在多层薄膜结构的劈裂截面上得到一条纳米尺度线。利用图像处理技术,对自顶向下扫描电镜(SEM)图像进行离线分析,评价了线宽和线边粗糙度(LER)。平均线宽小于25 nm,并估计了LER。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines
One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.
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