晶圆级mos2晶体管的SPICE建模与验证

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278321

Xi Wang, Shunli Ma, Baowen Zhong, Junyan Ren

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引用次数: 0

摘要

本文基于62级MOSFET SPICE模型模板，建立了Mos2场效应晶体管电流-电压(I-V)特性的SPICE模型。基于所建立的模型，模拟了单层Mos2场效应管的输出特性和转移特性。根据不同的工作区域提取模型参数。本文的Mos2场效应管的I-V特性的均方根误差极小，仿真速度快。此外，我们搭建了一个逆变电路来验证模型的准确性，其电压传递特性(VTC)的仿真结果与实验结果吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SPICE Modeling and Verification of Wafer-Scale MoS2Transistors

This paper presents a SPICE model for the current-voltage (I-V) characteristics of Mos2 field-effect transistors based on the level-62 MOSFET SPICE model template. We simulated both the output characteristics and transfer characteristics of single-layer Mos2 FETs based on the model we built. Model parameters are extracted according to different working region. The root-mean-square error of the I-V characteristics of Mos2 FETs in this paper is extremely small and the simulation speed is fast. In addition, we built an inverter circuit to verify the accuracy of our model, and the simulation results of its voltage transfer characteristics(VTC) match well with the experimental results.

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来源期刊

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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