MOL/BEOL空气隔离器对3nm节点寄生电容和电路性能的影响

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870410

A. Pal, Sushant Mittal, E. Bazizi, A. Sachid, Mehdi Saremi, B. Colombeau, G. Thareja, Samuel Lin, B. Alexander, S. Natarajan, B. Ayyagari

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引用次数: 7

摘要

在3nm工艺节点上，研究了在MOL和BEOL处空气间隔对电路性能的影响。模拟结果表明，通过在MOL和BEOL处引入空气间隔，寄生电容可降低18%，在31级环形振荡器上模拟的电路性能可提高6%。其他先进的寄生改进技术，如钌，也显示出类似的性能改进。最后，我们表明，当这两种技术相结合时，电路性能达到最佳，电路性能提升16%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit Performance at 3 nm Node

Impact of air-spacer at MOL and BEOL on circuit performance at 3nm technology node is studied. Our modeling results show that by introducing air-spacer at MOL and BEOL, parasitic capacitance can be reduced by 18% and circuit performance as simulated on a 31-stage ring oscillator can be improved by 6%. Other advanced parasitic improvement technologies, such as Ruthenium, also show similar performance improvement. Finally, we show that best circuit performance is achieved when these 2 technologies are combined, yielding to a circuit performance boost of 16%.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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