M. S. Z. Sarker, M. Hossain, N. Hossain, M. Rasheduzzaman, Md. Ashraful Islam
{"title":"8T SRAM单元的面积优化以实现低功耗","authors":"M. S. Z. Sarker, M. Hossain, N. Hossain, M. Rasheduzzaman, Md. Ashraful Islam","doi":"10.1109/CEEE.2015.7428233","DOIUrl":null,"url":null,"abstract":"Cache memory plays an important role in high speed electronic devices. SRAM is the key element of cache memory. Cache memory is used for their high speed and SRAM is the element which provides speed to the cache. So this work is mainly concentrated on the simulation and analysis of 8T SRAM cells and their comparative analysis of different parameters such as width to length ratio, capacitance and power consumption. All the simulation has been carried out using Microwind and DSCH2 EDA tool.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"26 1","pages":"117-120"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Area optimization in 8T SRAM cell for low power consumption\",\"authors\":\"M. S. Z. Sarker, M. Hossain, N. Hossain, M. Rasheduzzaman, Md. Ashraful Islam\",\"doi\":\"10.1109/CEEE.2015.7428233\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cache memory plays an important role in high speed electronic devices. SRAM is the key element of cache memory. Cache memory is used for their high speed and SRAM is the element which provides speed to the cache. So this work is mainly concentrated on the simulation and analysis of 8T SRAM cells and their comparative analysis of different parameters such as width to length ratio, capacitance and power consumption. All the simulation has been carried out using Microwind and DSCH2 EDA tool.\",\"PeriodicalId\":6490,\"journal\":{\"name\":\"2015 International Conference on Electrical & Electronic Engineering (ICEEE)\",\"volume\":\"26 1\",\"pages\":\"117-120\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Electrical & Electronic Engineering (ICEEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEEE.2015.7428233\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEEE.2015.7428233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Area optimization in 8T SRAM cell for low power consumption
Cache memory plays an important role in high speed electronic devices. SRAM is the key element of cache memory. Cache memory is used for their high speed and SRAM is the element which provides speed to the cache. So this work is mainly concentrated on the simulation and analysis of 8T SRAM cells and their comparative analysis of different parameters such as width to length ratio, capacitance and power consumption. All the simulation has been carried out using Microwind and DSCH2 EDA tool.