R. Isoaho, A. Aho, A. Tukiainen, T. Aho, M. Raappana, T. Salminen, Jarno Reuna, M. Guina
{"title":"用于6结空间太阳能电池的窄带隙稀氮化材料","authors":"R. Isoaho, A. Aho, A. Tukiainen, T. Aho, M. Raappana, T. Salminen, Jarno Reuna, M. Guina","doi":"10.1109/ESPC47532.2019.9049263","DOIUrl":null,"url":null,"abstract":"Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.","PeriodicalId":6734,"journal":{"name":"2019 European Space Power Conference (ESPC)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells\",\"authors\":\"R. Isoaho, A. Aho, A. Tukiainen, T. Aho, M. Raappana, T. Salminen, Jarno Reuna, M. Guina\",\"doi\":\"10.1109/ESPC47532.2019.9049263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.\",\"PeriodicalId\":6734,\"journal\":{\"name\":\"2019 European Space Power Conference (ESPC)\",\"volume\":\"1 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 European Space Power Conference (ESPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESPC47532.2019.9049263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 European Space Power Conference (ESPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESPC47532.2019.9049263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells
Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
