双扩散浮动保护环InGaAs/InP雪崩光电二极管的优化

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.969005

Jian Wei, J. C. Dries, Hongsheng Wang, G. Olsen, S. Forrest

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引用次数: 3

摘要

本研究从理论分析和实验结果两方面对高速InGaAs/InP APD的双扩散FGR结构进行了优化。设计了一种增益大于10的高速无边缘击穿APD。结合死区效应对该APD的噪声进行了测量和分析。

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Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes

In this study, the double diffused FGR structure of a high-speed InGaAs/InP APD was optimized from both theoretical analysis and experimental results. A high-speed edge-breakdown-free APD with gain of more than 10 was demonstrated following the design rule. Noise of this APD was measured and analyzed incorporating the dead-space effect.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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