发射光谱在TSV制造中的端点检测

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615575

J. M. Gu, Paragkumar Thadesar, A. Dembla, S. Hong, M. Bakir, G. May

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引用次数: 1

摘要

提出了一种基于发射光谱数据的偏最小二乘-支持向量机(PLS-SVM)混合模型，并成功地用于预测采用博世工艺蚀刻的硅通孔(tsv)的端点检测。对于直径为80 μm和25 μm的tsv，结果较准确。

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Endpoint detection using optical emission spectroscopy in TSV fabrication

A hybrid partial least squares-support vector machine (PLS-SVM) model of optical emission spectroscopy data is proposed and successfully demonstrated to predict the endpoint detection of through silicon vias (TSVs) etched using the Bosch process. Accurate results are shown for TSVs with diameters of 80 μm and 25 μm.

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来源期刊

2013 IEEE International Interconnect Technology Conference - IITC

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