用于多波束光刻的集成肖特基发射极阵列的制造和表征

2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2007-01-01 DOI:10.1109/MEMSYS.2007.4433145

C. Tsai, T. Ono, M. Esashi

{"title":"用于多波束光刻的集成肖特基发射极阵列的制造和表征","authors":"C. Tsai, T. Ono, M. Esashi","doi":"10.1109/MEMSYS.2007.4433145","DOIUrl":null,"url":null,"abstract":"The design, fabrication and characterization of an integrated Schottky emitter array are presented and demonstrated. The integrated emitter array consists of boron-doped diamond heaters with a diamond tip, Si micro gate array and Si focusing lens array. The diamond film is selectively deposited using electrophoresis of diamond seed particles and a hot filament chemical vapor deposition (HF-CVD) technique. The emitters, gate and lens array are electrically isolated from each other on a Pyrex glass substrate. When heating the diamond emitter at a voltage of 2.8 V, an emission current of 490 nA has been observed at an electric field of 0.36 V/ mum. The emission current was found to be stable with a fluctuation of 2% per hr. By fitting the measure data with Schottky emission model, the temperature at the emitter was calculated to be 1680degC.","PeriodicalId":6388,"journal":{"name":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"9 1","pages":"373-376"},"PeriodicalIF":0.0000,"publicationDate":"2007-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and characterization of an integrated schottky emitter array for multi-beam lithography applications\",\"authors\":\"C. Tsai, T. Ono, M. Esashi\",\"doi\":\"10.1109/MEMSYS.2007.4433145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication and characterization of an integrated Schottky emitter array are presented and demonstrated. The integrated emitter array consists of boron-doped diamond heaters with a diamond tip, Si micro gate array and Si focusing lens array. The diamond film is selectively deposited using electrophoresis of diamond seed particles and a hot filament chemical vapor deposition (HF-CVD) technique. The emitters, gate and lens array are electrically isolated from each other on a Pyrex glass substrate. When heating the diamond emitter at a voltage of 2.8 V, an emission current of 490 nA has been observed at an electric field of 0.36 V/ mum. The emission current was found to be stable with a fluctuation of 2% per hr. By fitting the measure data with Schottky emission model, the temperature at the emitter was calculated to be 1680degC.\",\"PeriodicalId\":6388,\"journal\":{\"name\":\"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"9 1\",\"pages\":\"373-376\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2007.4433145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2007.4433145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍并演示了一种集成肖特基发射极阵列的设计、制造和特性。集成发射极阵列由金刚石尖端掺硼金刚石加热器、硅微栅阵列和硅聚焦透镜阵列组成。采用金刚石种子颗粒电泳和热丝化学气相沉积(HF-CVD)技术选择性地制备了金刚石薄膜。发射器、栅极和透镜阵列在耐热玻璃基板上相互电隔离。当在2.8 V的电压下加热金刚石发射极时，在0.36 V/ mum的电场下观察到490 nA的发射电流。发现发射电流稳定，每小时波动2%。利用肖特基发射模型拟合测量数据，计算出发射极温度为1680℃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fabrication and characterization of an integrated schottky emitter array for multi-beam lithography applications

The design, fabrication and characterization of an integrated Schottky emitter array are presented and demonstrated. The integrated emitter array consists of boron-doped diamond heaters with a diamond tip, Si micro gate array and Si focusing lens array. The diamond film is selectively deposited using electrophoresis of diamond seed particles and a hot filament chemical vapor deposition (HF-CVD) technique. The emitters, gate and lens array are electrically isolated from each other on a Pyrex glass substrate. When heating the diamond emitter at a voltage of 2.8 V, an emission current of 490 nA has been observed at an electric field of 0.36 V/ mum. The emission current was found to be stable with a fluctuation of 2% per hr. By fitting the measure data with Schottky emission model, the temperature at the emitter was calculated to be 1680degC.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)

自引率

0.00%

发文量