STT-MRAM快速交换实现高速应用

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265027

T. Y. Lee, K. Yamane, J. Kwon, V. B. Naik, Y. Otani, D. Zeng, J. H. Lim, K. Sivabalan, C. Chiang, Y. Huang, S. Jang, L. Y. Hau, R. Chao, N. Chung, W. Neo, K. Khua, N. Thiyagarajah, T. Ling, L. C. Goh, J. Hwang, L. Zhang, R. Low, N. Balasankaran, F. Tan, J. Wong, C. Seet, J. W. Ting, S. Ong, Y. You, S. Woo, S. Siah

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引用次数: 2

摘要

我们展示了小于10 ns的写入速度和40Mb嵌入式MRAM (eMRAM)宏的读取访问，覆盖高达125°C的高温。宏显示在125°C下无电数据保留10秒，并且能够实现1012个周期的耐力和5ns的读取时间。我们的研究表明，MTJ堆栈工程和MTJ CD优化是实现抑制误码率(BER)膨胀和0.5倍Ic缩放的两个关键因素。

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Fast Switching of STT-MRAM to Realize High Speed Applications

We demonstrate less than 10 ns write speed and read access for 40Mb embedded MRAM (eMRAM) macro covering high temperature up to 125°C. The macro shows un-powered data retention of 10 second at 125°C and the capability of achieving 1012 cycles endurance and 5 ns read time. Our study indicates that MTJ stack engineering and MTJ CD optimization are the two critical factors to achieve the suppression of bit error rate (BER) ballooning and 0.5x Ic scaling for fast switching.

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2020 IEEE Symposium on VLSI Technology

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