蓝宝石衬底上新型氮化硼镓深紫外边缘发射激光二极管的仿真研究

M. I. Niass, M. Sharif, Yi-fu Wang, Fang Wang, Yuhuai Liu
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引用次数: 0

摘要

利用先进的lastip - crossllight模拟器,对三氮化硼镓BxGa1-xN组成的新型边缘发射激光二极管(EELD)进行了理论分析,以提高其p型电导率。仿真结果表明,激光的目标波长为270 nm。此外,当n电极宽度为0.5µm或p电极宽度为3µm时,直接电阻最小。这一结果归因于直接电阻与n电极和p电极宽度大小之间的线性和非线性关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deep Ultraviolet Edge Emitting Laser Diode Using Novel Boron Gallium Nitride over Sapphire Substrate: Simulation Study
Exploiting the advanced LASTIP-Crosslight simulator, theoretical analysis for a novel edge emitting laser diode (EELD) composed of trinary Boron Gallium Nitride BxGa1-xN is performed in this work to enhance the P-type conductivity. The simulation results obtained with a prototypical proposal expect lasing at a target UVC wavelength of 270 nm. Furthermore, the minimum direct-resistance can be obtained under the N-electrode area width of 0.5 µm or the P-electrode area width of 3 µm. This result is attributed to the linear and nonlinear relationships between the direct-resistance and the width sizes of N-electrode and P-electrode.
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