Cheng-Hsuan Kuo, V. Wang, Zichen Zhang, J. Spiegelman, D. Alvarez, A. Kummel, SeongUk Yun, H. Simka
{"title":"硅原子层沉积制备低电阻率氮化钛薄膜","authors":"Cheng-Hsuan Kuo, V. Wang, Zichen Zhang, J. Spiegelman, D. Alvarez, A. Kummel, SeongUk Yun, H. Simka","doi":"10.1109/IITC51362.2021.9537463","DOIUrl":null,"url":null,"abstract":"A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen were applied to further reduce the surface impurities including all halogens. These experiments indicate that minimizing oxygen concentration using an ultra-clean ALD process with minimum background oxidants and high purity precursors are keys in producing TiN thin films with low resistivity.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low Resistivity Titanium Nitride Thin Film Fabricated by Atomic Layer Deposition on Silicon\",\"authors\":\"Cheng-Hsuan Kuo, V. Wang, Zichen Zhang, J. Spiegelman, D. Alvarez, A. Kummel, SeongUk Yun, H. Simka\",\"doi\":\"10.1109/IITC51362.2021.9537463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen were applied to further reduce the surface impurities including all halogens. These experiments indicate that minimizing oxygen concentration using an ultra-clean ALD process with minimum background oxidants and high purity precursors are keys in producing TiN thin films with low resistivity.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537463\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Resistivity Titanium Nitride Thin Film Fabricated by Atomic Layer Deposition on Silicon
A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen were applied to further reduce the surface impurities including all halogens. These experiments indicate that minimizing oxygen concentration using an ultra-clean ALD process with minimum background oxidants and high purity precursors are keys in producing TiN thin films with low resistivity.
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