{"title":"基于金属诱导横向结晶机制的高性能薄膜晶体管制造优化建模","authors":"C.F. Cheng, M. Poon, C. Kok, M. Chan","doi":"10.1109/IEDM.2002.1175905","DOIUrl":null,"url":null,"abstract":"A model to predict metal-induced-lateral-crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"54 1","pages":"569-572"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Modeling of metal-induced-lateral-crystallization mechanism for optimization of high performance thin-film-transistor fabrication\",\"authors\":\"C.F. Cheng, M. Poon, C. Kok, M. Chan\",\"doi\":\"10.1109/IEDM.2002.1175905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model to predict metal-induced-lateral-crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"54 1\",\"pages\":\"569-572\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of metal-induced-lateral-crystallization mechanism for optimization of high performance thin-film-transistor fabrication
A model to predict metal-induced-lateral-crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.
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