确定性和无场电压控制MRAM，适用于高性能和低功耗应用

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265057

Y. C. Wu, W. Kim, K. Garello, F. Yasin, G. Jayakumar, S. Couet, R. Carpenter, S. Kundu, S. Rao, D. Crotti, J. van Houdt, G. Groeseneken, G. Kar

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引用次数: 10

摘要

我们提出了一种确定性的VCMA写入概念，该概念允许排除传统VCMA写入方案所需的预读。我们将其应用于400°C兼容的pMTJ器件，具有246%的高TMR和保持率$\Delta=54$，并展示了真正的ns级写入速度。此外，通过集成磁性硬掩模作为面内磁场发生器，我们实现了可靠的1.1 GHz无外场VCMA开关，写入能量为20fJ。达到了超过$10^{10}$周期的耐久性。我们的研究结果解决了压控MRAM技术的基本写入操作挑战。

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Deterministic and field-free voltage-controlled MRAM for high performance and low power applications

We propose a deterministic VCMA writing concept that allows exclusion of the pre-read which is required in conventional VCMA write scheme. We apply it on 400°C compatible pMTJ devices with high TMR 246% and retention $\Delta=54$ and demonstrate a genuine ns-scale write speed. Furthermore, we realize reliable 1.1 GHz external field-free VCMA switching with 20fJ write energy by integrating a magnetic hard mask as the in-plane magnetic field generator. An endurance of more than $10^{10}$ cycles is achieved. Our results address the fundamental write operation challenges of the voltage-controlled MRAM technologies.

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2020 IEEE Symposium on VLSI Technology

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