一种将传统非易失性记忆体嵌入深亚微米CMOS的方法

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265049

C. S. Lin, W.T. Huang, A. Huang, Y.H. Yang, Y. Hsu, S.K. Yang, Jack Liu, H.W. Tseng, Jarcle Huang, B.Y. Chou, Kevin Huang, W. Chang, Daniel Chang, C. H. Chien, H. Yeh, P. Liu, C.D. Hsieh, H. Chuang, A. Kalnitsky

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引用次数: 1

摘要

本工作提出了一个采用晶圆对晶(WoW)技术的16nm FinFET CMOS与嵌入式闪存40nm存储器的例子。我们的研究结果表明，在3D组装前后的相应电路中，嵌入式闪存性能、CMOS逻辑速度和功耗相当。WoW集成可以为目前没有解决方案的高级CMOS节点提供嵌入式闪存解决方案。该方法也适用于在高级CMOS中嵌入其他功能。

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An approach to embedding traditional non-volatile memories into a deep sub-micron CMOS

This work presents an example of 16nm FinFET CMOS with an embedded flash 40nm memory employing Wafer-on-Wafer (WoW) technology. Our results show comparable embedded flash performance, CMOS logic speed and power consumption comparing corresponding circuits before and after the 3D assembly. WoW integration can provide embedded flash solution for advanced CMOS nodes where no solutions currently exist. The method is also applicable for embedding other functionalities into the advanced CMOS.

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2020 IEEE Symposium on VLSI Technology

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