Al-p+发射极对交叉背接触太阳能电池Voc特性的影响及其优化

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI:10.1109/PVSC.2013.6745025

Wei Zhang, Chen Chen, R. Jia, G. Janssen, Dai-Sheng Zhang, Zhao Xing, P. Bronsveld, A. Weeber, Zhi Jin, Xinyu Liu

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引用次数: 0

摘要

对于丝网印刷的Al-p+发射极(Al-p+)互指背接触(IBC)太阳能电池，通过精确控制烧制条件，使Al-p+发射极不均匀性和不连续引起的分流路径最小化。PC2D仿真结果表明，减少和消除Al-p+发射极上的分流路径可以显著提高光伏性能，特别是开路电压(Voc)。我们使用一个多二极管模型来建立Voc和电池有效分流电阻之间的关系。

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The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

In the case of screen-printed aluminum alloyed p+ emitter (Al-p+) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p+ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p+ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (Voc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.

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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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