RX-PUF:基于模拟无源RRAM交叉棒阵列的低功耗、密集、可靠和弹性物理不可克隆功能

M. Mahmoodi, H. Nili, D. Strukov
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引用次数: 14

摘要

我们提出了一种基于模拟RRAM交叉棒阵列电路的物理不可克隆功能(PUF)的新架构(“RX-PUF”)。RX-PUF利用了独特的RRAM特性,例如I-V非线性,以及器件到器件(d2d)的变化和可调性。作为概念验证,我们使用250 nm半间距(F) 20×20交叉杆阵列和被动集成器件制作了600 kb挑战响应对(CRP) PUF原型。RX-PUF原型具有优异的物理特性,例如~1600 F2/位密度和高达41 fJ/位的能量效率。通过使用隐藏输入来提高其功能性能,也很有前景。即使不使用任何纠错方法,在室温下测得的误码率(BER)为0.7%,在100°C时测得的误码率≤5.3%。测量的反应显示出接近理想的均匀性(50.04%)和hd间(50.12%),并通过了所有相关的NIST随机性测试。初步结果还显示,RX-PUF对机器学习(ML)攻击的弹性非常高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RX-PUF: Low Power, Dense, Reliable, and Resilient Physically Unclonable Functions Based on Analog Passive RRAM Crossbar Arrays
We propose a novel architecture ("RX-PUF") for physically unclonable functions (PUF) based on analog RRAM crossbar array circuits. RX-PUF takes advantage of unique RRAM properties, such as I-V nonlinearity, and its device-to-device (d2d) variations and tunability. As a proof of concept, we have prototyped a 600 kb challenge response pair (CRP) PUF using 250 nm half-pitch (F) 20×20 crossbar arrays with passively integrated devices. The RX-PUF prototype features excellent physical characteristics, e.g. ~1600 F2/bit density and up to 41 fJ/bit energy efficiency. Its functional performance, improved by utilizing hidden input, is also very promising. The measured bit error rate (BER) was 0.7% at RT and ≤ 5.3% at 100°C, even without using any error correction methods. The measured responses showed near-ideal uniformity (50.04%) and inter-HD (50.12%) and passed all relevant NIST randomness tests. The preliminary results showed also very high resilience of RX-PUF against machine learning (ML) attacks.
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