大电流β- ga2o3肖特基整流器的电热分析和边缘终止技术

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870536

R. Shanna, Elin Patlick, Jiancheng Yang, F. Ren, M. Law, S. Pearton

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引用次数: 0

摘要

利用佛罗里达面向对象设备与工艺(Florida Object Oriented Device and Process, flood) TCAD模拟器对β- ga2o3肖特基整流器的性能和局限性进行了仿真研究。研究了不同体积和外延层厚度以及散热器几何形状对正向偏压和功率的影响。更厚的体/衬底导致更高的最高温度值，而更薄的外延层导致更高的正向电流，从而通过焦耳加热获得更高的最高温度值。铜翅片散热器的几何形状使最高温度降低了26.76%。研究了β- ga2o3肖特基整流器的边缘终止技术，以最大化击穿电压，识别击穿位置并减轻最大电场。以A1203作为介电材料在场板结构中得到了最好的结果，同时也研究了场板尺寸的影响。

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Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers

The performance and limitations of β-Ga2 O3 Schottky rectifiers is studied via simulation using the Florida Object Oriented Device and Process (FLOODS) TCAD simulator. The effect of forward bias and power is examined for various bulk and epitaxial layer thicknesses as well as for heat sink geometries. Thicker bulk/substrate results in higher maximum temperature values whereas a thinner epitaxial-layer results in higher forward currents and hence a higher maximum temperature values via Joule heating. A Cu finned heat sink geometry results in a 26.76% reduction in the maximum temperature. Edge termination techniques are examined for β-Ga2 O3 Schottky rectifiers in order to maximize the breakdown voltage, identify the location of breakdown and mitigate the maximum electric field. Best results have been observed for A1203 as the dielectric material in a field-plate structure while the effect of field-plate dimensions is also studied.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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