用脉冲测量方法研究GaAs mesfet的热特性

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235454

L. Selmi, B. Riccò

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引用次数: 5

摘要

通过在几个控制温度下进行脉冲I-V测量，表征了GaAs mesfet中的热效应。从测量数据中提取的主要器件参数的温度依赖性，在简化的类似spice的器件模型中实现，耦合了电学和热学效应。该模型在宽偏置和温度范围内与实测数据吻合良好。

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Thermal characterization of GaAs MESFETs by means of pulsed measurements

Thermal effects in GaAs MESFETs have been characterized by means of pulsed I-V measurements performed at several controlled temperatures. The temperature dependence of the main device parameters, extracted from the measured data, was implemented in a simplified, SPICE-like model of the device, coupling electrical and thermal effects. The model provides good agreement with the measured data over wide bias and temperature ranges.<>

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International Electron Devices Meeting 1991 [Technical Digest]

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