辐射硬化SiC MOS结构的原型与表征

2019 European Space Power Conference (ESPC) Pub Date : 2019-09-01 DOI:10.1109/ESPC.2019.8931985

F. Pintacuda, V. Cantarella, M. Muschitiello, S. Massetti

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引用次数: 2

摘要

这项研究应被视为支持计划开发用于空间应用的离散欧洲抗辐射SiC功率mosfet的准备工作。它基于原型和制造基本结构，已提交给直流，交流，稳定性表征和辐射测试，以便研究构成MOSFET结构的任何基本元素对辐射灵敏度的贡献。

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Prototyping and characterization of radiation hardened SiC MOS structures

This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizations and radiation tests, in order to study the contributions of any basic element that composes the MOSFET structure to radiation sensitivity in a dedicated way.

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2019 European Space Power Conference (ESPC)

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