{"title":"光电器件在硅衬底上的程序化电泳组装和异质集成","authors":"A. O’Riordan, K. Dwane, G. Redmond","doi":"10.1109/IEDM.2001.979466","DOIUrl":null,"url":null,"abstract":"A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650 nm emission GaAs based LEDs at silicon substrates is demonstrated.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"15 1","pages":"9.4.1-9.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates\",\"authors\":\"A. O’Riordan, K. Dwane, G. Redmond\",\"doi\":\"10.1109/IEDM.2001.979466\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650 nm emission GaAs based LEDs at silicon substrates is demonstrated.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"15 1\",\"pages\":\"9.4.1-9.4.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979466\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates
A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650 nm emission GaAs based LEDs at silicon substrates is demonstrated.
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