N. Zhang, B. Moran, S. Denbaars, U. Mishra, X. W. Wang, T. Ma
{"title":"表面陷阱对GaN功率开关hemt击穿电压和开关速度的影响","authors":"N. Zhang, B. Moran, S. Denbaars, U. Mishra, X. W. Wang, T. Ma","doi":"10.1109/IEDM.2001.979575","DOIUrl":null,"url":null,"abstract":"As a competitive candidate for power switching electronics, GaN has slightly wider bandgap, higher electric strength, and higher saturated velocity than SiC. An insulating-gate structure GaN HEMT with a breakdown voltage of 1.3 kV was fabricated with a specific on-resistance of 1.7 m/spl Omega/.cm/sup 2/. State-of-the-art power device figure of merit of V/sub BR//sup 2//R/sub on/= 9.94/spl times/10/sup 8/ [V/sup 2//spl middot//spl Omega//sup -1/ cm/sup -2/] was achieved on this device. Device analysis shows that the surface traps play a dominant role in breakdown voltage and switching speed. High switching speed was realized on the kilo-volts devices by adoption of double gate dielectrics.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"32 1","pages":"25.5.1-25.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"97","resultStr":"{\"title\":\"Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs\",\"authors\":\"N. Zhang, B. Moran, S. Denbaars, U. Mishra, X. W. Wang, T. Ma\",\"doi\":\"10.1109/IEDM.2001.979575\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As a competitive candidate for power switching electronics, GaN has slightly wider bandgap, higher electric strength, and higher saturated velocity than SiC. An insulating-gate structure GaN HEMT with a breakdown voltage of 1.3 kV was fabricated with a specific on-resistance of 1.7 m/spl Omega/.cm/sup 2/. State-of-the-art power device figure of merit of V/sub BR//sup 2//R/sub on/= 9.94/spl times/10/sup 8/ [V/sup 2//spl middot//spl Omega//sup -1/ cm/sup -2/] was achieved on this device. Device analysis shows that the surface traps play a dominant role in breakdown voltage and switching speed. High switching speed was realized on the kilo-volts devices by adoption of double gate dielectrics.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"32 1\",\"pages\":\"25.5.1-25.5.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"97\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979575\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs
As a competitive candidate for power switching electronics, GaN has slightly wider bandgap, higher electric strength, and higher saturated velocity than SiC. An insulating-gate structure GaN HEMT with a breakdown voltage of 1.3 kV was fabricated with a specific on-resistance of 1.7 m/spl Omega/.cm/sup 2/. State-of-the-art power device figure of merit of V/sub BR//sup 2//R/sub on/= 9.94/spl times/10/sup 8/ [V/sup 2//spl middot//spl Omega//sup -1/ cm/sup -2/] was achieved on this device. Device analysis shows that the surface traps play a dominant role in breakdown voltage and switching speed. High switching speed was realized on the kilo-volts devices by adoption of double gate dielectrics.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
