Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor

In this paper, the BSIM-CMG model parameters are extracted for the nanosheet gate-alI-around (GAA) transistors with considering the temperature distribution and self-heating (SH) effect. The data used for parameter extraction is obtained from the 3-D TCAD simulation, which is calibrated with the experimental data to ensure the analysis accuracy. The extracted model and its parameter are validated from -40°C to 125°C. In order to evaluate our extracted model, the performance of the 6T-SRAM is investigated considering SH effect within different ambient temperature (TA). The results show that the read and write noise margins are all degenerated with increasing TA, and the static power increases as expected.