铌酸锂在绝缘体芯片上产生超亮多路能量-时间纠缠光子

Guang-Tai Xue, Y. Niu, Xiaoyue Liu, Jiachen Duan, Wenjun Chen, Ying Pan, Kunpeng Jia, Xiaohan Wang, Hua-Ying Liu, Yong Zhang, P. Xu, G. Zhao, Xinlun Cai, Y. Gong, Xiaopeng Hu, Zhenda Xie, Shi-ning Zhu
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引用次数: 29

摘要

高通量纠缠光子源是量子光学研究和应用的关键资源。本文在铌酸锂隔离器(LNOI)芯片上实现了光子对速率为2.79*10^11 Hz/mW,光谱亮度为1.53*10^9 Hz/nm/mW。与现有技术相比,这些数据提升了两个数量级以上。130纳米宽带宽设计用于8通道复用能量时间纠缠。利用高消光频率相关和高达99.17%可见性的Franson干扰,这种能量-时间纠缠复用进一步提高了高通量数据速率,在芯片上的量子信息处理中具有广泛的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultrabright Multiplexed Energy-Time-Entangled Photon Generation from Lithium Niobate on Insulator Chip
High-flux entangled photon source is the key resource for quantum optical study and application. Here it is realized in a lithium niobate on isolator (LNOI) chip, with 2.79*10^11 Hz/mW photon pair rate and 1.53*10^9 Hz/nm/mW spectral brightness. These data are boosted by over two orders of magnitude compared to existing technologies. A 130-nm broad bandwidth is engineered for 8-channel multiplexed energy-time entanglement. Harnessed by high-extinction frequency correlation and Franson interferences up to 99.17% visibility, such energy-time entanglement multiplexing further enhances high-flux data rate, and warrants broad applications in quantum information processing on a chip.
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