Effect of Trap on Carrier Transport in InAs FET with Al2 O3 Oxide: DFT-based NEGF simulations

To accurately assess the effect of trap on the performance of field effect transistors (FETs), atom-level first-principles modeling of channel/oxide/trap and rigorous quantum mechanical transport calculations are necessary. In this work we have developed an innovative approach to solve the challenging problem efficiently. Non-equilibrium Green’s function simulation of InAs FET with a trap in the channel/oxide interface that is atomically modeled by using the density functional theory is demonstrated.