多层Cu/低k BEOL集成的无cmp和无cmp方法

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979408

M. Tsai, S.W. Chou, C. Chang, C.H. Hsieha, M.W. Lin, C.M. Wu, W. Shue, D. Yu, M. Liang

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引用次数: 3

摘要

采用电抛光(EP)、平面接触镀(CP)铜膜和TaN干蚀刻的无CMP工艺，消除了CMP过程中的应力诱发剥落。通过优化电催化工艺，可以获得纳米级的光滑度和高质感的铜。无cmp工艺的4级Cu/低k互连具有优异的成品率。该工艺将ECP和CMP的吞吐量提高了两倍，并且减少了碟形。

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CMP-free and CMP-less approaches for multilevel Cu/low-k BEOL integration

A CMP-free process by electropolishing (EP) the planar contact plating (CP) Cu film and TaN dry etching which eliminate the stress induced peeling during CMP was demonstrated. Nanometer smoothness and a highly <111> texture of Cu can be achieved by optimizing the EP process. A 4-level Cu/low-k interconnect with CMP-less process was demonstrated with excellent yield. This process improves the throughput on ECP and CMP by two and has less dishing.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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