{"title":"超薄栅极氧化物软击穿后栅漏电流时间演化的新模型","authors":"T. Hosoi, P. L. Lo Re, Y. Kamakura, K. Taniguchi","doi":"10.1109/IEDM.2002.1175802","DOIUrl":null,"url":null,"abstract":"The post-SBD degradation of ultra-thin gate oxides is investigated by means of experiments, theoretical modeling, and computer simulations. The gate leakage current after SBD increases gradually, and is finally limited by the parasitic resistance. A newly developed model shows that the gate leakage increase of post-SBD MOSFETs even under operating conditions causes a significant impact on LSIs in terms of the power consumption.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"116 1","pages":"155-158"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":"{\"title\":\"A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides\",\"authors\":\"T. Hosoi, P. L. Lo Re, Y. Kamakura, K. Taniguchi\",\"doi\":\"10.1109/IEDM.2002.1175802\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The post-SBD degradation of ultra-thin gate oxides is investigated by means of experiments, theoretical modeling, and computer simulations. The gate leakage current after SBD increases gradually, and is finally limited by the parasitic resistance. A newly developed model shows that the gate leakage increase of post-SBD MOSFETs even under operating conditions causes a significant impact on LSIs in terms of the power consumption.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"116 1\",\"pages\":\"155-158\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"42\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175802\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175802","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides
The post-SBD degradation of ultra-thin gate oxides is investigated by means of experiments, theoretical modeling, and computer simulations. The gate leakage current after SBD increases gradually, and is finally limited by the parasitic resistance. A newly developed model shows that the gate leakage increase of post-SBD MOSFETs even under operating conditions causes a significant impact on LSIs in terms of the power consumption.
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