三维铁电负电容FinFET的数学建模与性能评价

IF 0.8 Q3 ENGINEERING, MULTIDISCIPLINARY

Modelling and Simulation in Engineering Pub Date : 2022-10-19 DOI:10.1155/2022/8345513

S. Alam, Rukon Uddin, M. J. Alam, Ahamed Raihan, S. Mahtab, Subrata Bhowmik

{"title":"三维铁电负电容FinFET的数学建模与性能评价","authors":"S. Alam, Rukon Uddin, M. J. Alam, Ahamed Raihan, S. Mahtab, Subrata Bhowmik","doi":"10.1155/2022/8345513","DOIUrl":null,"url":null,"abstract":"Ferroelectric negative capacitance materials have now been proposed for lowering electronics energy dissipation beyond basic limitations. In this paper, we presented the analysis on the performance of negative capacitance (NC) FinFET in comparison with conventional gate dielectrics by using a separation of variables approach, which is an optimal quasi-3D mathematical model. The result has been signified steeper surface potential (ψ), lower threshold voltage (Vth), 1.2 mA of on-state current (Ion), and enhanced immunity of negative capacitance FinFET against short channel effects (SCE’s) like 35.3 mV/V of drain-induced barrier lowering (DIBL), 60 mV/dec of subthreshold swing (SS) along with smallest off state current (Ioff) among another conventional gate dielectric. Hence, NC FinFET can be a potential candidate for low power and high-performance device.","PeriodicalId":45541,"journal":{"name":"Modelling and Simulation in Engineering","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2022-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET\",\"authors\":\"S. Alam, Rukon Uddin, M. J. Alam, Ahamed Raihan, S. Mahtab, Subrata Bhowmik\",\"doi\":\"10.1155/2022/8345513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric negative capacitance materials have now been proposed for lowering electronics energy dissipation beyond basic limitations. In this paper, we presented the analysis on the performance of negative capacitance (NC) FinFET in comparison with conventional gate dielectrics by using a separation of variables approach, which is an optimal quasi-3D mathematical model. The result has been signified steeper surface potential (ψ), lower threshold voltage (Vth), 1.2 mA of on-state current (Ion), and enhanced immunity of negative capacitance FinFET against short channel effects (SCE’s) like 35.3 mV/V of drain-induced barrier lowering (DIBL), 60 mV/dec of subthreshold swing (SS) along with smallest off state current (Ioff) among another conventional gate dielectric. Hence, NC FinFET can be a potential candidate for low power and high-performance device.\",\"PeriodicalId\":45541,\"journal\":{\"name\":\"Modelling and Simulation in Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2022-10-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Modelling and Simulation in Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2022/8345513\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modelling and Simulation in Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2022/8345513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

铁电负电容材料现在被提出用于降低电子能量耗散超出基本限制。本文采用一种最优准三维数学模型——分离变量法，对负电容FinFET与传统栅极介质的性能进行了对比分析。结果表明，与其他传统栅极介质相比，负电容FinFET具有更陡的表面电位(ψ)、更低的阈值电压(Vth)、1.2 mA的导通电流(Ion)和更强的抗短通道效应(SCE)，如漏极势垒降低(DIBL)的35.3 mV/V、亚阈值摆幅(SS)的60 mV/dec以及最小的关断电流(Ioff)。因此，NC FinFET可以成为低功耗和高性能器件的潜在候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET

Ferroelectric negative capacitance materials have now been proposed for lowering electronics energy dissipation beyond basic limitations. In this paper, we presented the analysis on the performance of negative capacitance (NC) FinFET in comparison with conventional gate dielectrics by using a separation of variables approach, which is an optimal quasi-3D mathematical model. The result has been signified steeper surface potential (ψ), lower threshold voltage (Vth), 1.2 mA of on-state current (Ion), and enhanced immunity of negative capacitance FinFET against short channel effects (SCE’s) like 35.3 mV/V of drain-induced barrier lowering (DIBL), 60 mV/dec of subthreshold swing (SS) along with smallest off state current (Ioff) among another conventional gate dielectric. Hence, NC FinFET can be a potential candidate for low power and high-performance device.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Modelling and Simulation in Engineering ENGINEERING, MULTIDISCIPLINARY-

CiteScore

2.70

自引率

3.10%

发文量

审稿时长

18 weeks

期刊介绍： Modelling and Simulation in Engineering aims at providing a forum for the discussion of formalisms, methodologies and simulation tools that are intended to support the new, broader interpretation of Engineering. Competitive pressures of Global Economy have had a profound effect on the manufacturing in Europe, Japan and the USA with much of the production being outsourced. In this context the traditional interpretation of engineering profession linked to the actual manufacturing needs to be broadened to include the integration of outsourced components and the consideration of logistic, economical and human factors in the design of engineering products and services.