基于二硫化钼及其组装异质结构的光电探测器

Chip Pub Date : 2022-09-01 DOI:10.1016/j.chip.2022.100017
Tao Hu , Rui Zhang , Jin-Ping Li , Jian-Yun Cao , Feng Qiu
{"title":"基于二硫化钼及其组装异质结构的光电探测器","authors":"Tao Hu ,&nbsp;Rui Zhang ,&nbsp;Jin-Ping Li ,&nbsp;Jian-Yun Cao ,&nbsp;Feng Qiu","doi":"10.1016/j.chip.2022.100017","DOIUrl":null,"url":null,"abstract":"<div><p>Photodetectors are finding various potential applications in sensing and detection, information communication, light-emitting diode, optical modulators, ultrafast laser, etc. Molybdenum disulfide (MoS<sub>2</sub>) has sparked great interest given its unique crystal phase, flexible preparation, structural stability, and regulable photoelectronic features. Therefore, the MoS<sub>2</sub>-based photodetector is demonstrated to be an excellent device fabrication platform to explore underlying sensitive detection, broadband optical detection, high-speed response, low-power consumption, two-dimensional integrated circuit, and its synergetic mechanism, which is also proved to be an excellent candidate for next-generation optoelectronics. This review summarizes the structural, optical, and transport features of MoS<sub>2</sub>. Then the working mechanisms and figures of merit are explored for the MoS<sub>2</sub> detector. Further, the detector modulation strategies are introduced in detail about layer-number engineering and chemical doping engineering. Afterward, the recent heterostructure assembling strategies (MoS<sub>2</sub>/nD, n=0,1,2,3) of detector architectures are classified based on flexible van der Waals assembling. Finally, the future direction of MoS<sub>2</sub> photodetectors is discussed, which can be delivered as a feasible guideline in two-dimensional photodetector and integrated circuit fields.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"1 3","pages":"Article 100017"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472322000156/pdfft?md5=fdac603297c89569dafa98c15063a3cb&pid=1-s2.0-S2709472322000156-main.pdf","citationCount":"16","resultStr":"{\"title\":\"Photodetectors based on two-dimensional MoS2 and its assembled heterostructures\",\"authors\":\"Tao Hu ,&nbsp;Rui Zhang ,&nbsp;Jin-Ping Li ,&nbsp;Jian-Yun Cao ,&nbsp;Feng Qiu\",\"doi\":\"10.1016/j.chip.2022.100017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Photodetectors are finding various potential applications in sensing and detection, information communication, light-emitting diode, optical modulators, ultrafast laser, etc. Molybdenum disulfide (MoS<sub>2</sub>) has sparked great interest given its unique crystal phase, flexible preparation, structural stability, and regulable photoelectronic features. Therefore, the MoS<sub>2</sub>-based photodetector is demonstrated to be an excellent device fabrication platform to explore underlying sensitive detection, broadband optical detection, high-speed response, low-power consumption, two-dimensional integrated circuit, and its synergetic mechanism, which is also proved to be an excellent candidate for next-generation optoelectronics. This review summarizes the structural, optical, and transport features of MoS<sub>2</sub>. Then the working mechanisms and figures of merit are explored for the MoS<sub>2</sub> detector. Further, the detector modulation strategies are introduced in detail about layer-number engineering and chemical doping engineering. Afterward, the recent heterostructure assembling strategies (MoS<sub>2</sub>/nD, n=0,1,2,3) of detector architectures are classified based on flexible van der Waals assembling. Finally, the future direction of MoS<sub>2</sub> photodetectors is discussed, which can be delivered as a feasible guideline in two-dimensional photodetector and integrated circuit fields.</p></div>\",\"PeriodicalId\":100244,\"journal\":{\"name\":\"Chip\",\"volume\":\"1 3\",\"pages\":\"Article 100017\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2709472322000156/pdfft?md5=fdac603297c89569dafa98c15063a3cb&pid=1-s2.0-S2709472322000156-main.pdf\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chip\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2709472322000156\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chip","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2709472322000156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

光电探测器在传感检测、信息通信、发光二极管、光调制器、超快激光等领域有着广泛的应用前景。二硫化钼(MoS2)由于其独特的晶体相、灵活的制备、结构稳定性和可调节的光电子特性而引起了人们的极大兴趣。因此,基于mos2的光电探测器被证明是探索底层敏感探测、宽带光学探测、高速响应、低功耗、二维集成电路及其协同机制的优秀器件制造平台,也被证明是下一代光电子学的优秀候选者。本文综述了二硫化钼的结构、光学和输运特性。然后探讨了二硫化钼探测器的工作机理和性能指标。此外,还详细介绍了探测器的层数工程和化学掺杂工程调制策略。然后,对基于柔性范德华组装的探测器结构的异质结构组装策略(MoS2/nD, n=0,1,2,3)进行了分类。最后,讨论了二硫化钼光电探测器的未来发展方向,为二维光电探测器和集成电路领域提供了可行的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photodetectors based on two-dimensional MoS2 and its assembled heterostructures

Photodetectors are finding various potential applications in sensing and detection, information communication, light-emitting diode, optical modulators, ultrafast laser, etc. Molybdenum disulfide (MoS2) has sparked great interest given its unique crystal phase, flexible preparation, structural stability, and regulable photoelectronic features. Therefore, the MoS2-based photodetector is demonstrated to be an excellent device fabrication platform to explore underlying sensitive detection, broadband optical detection, high-speed response, low-power consumption, two-dimensional integrated circuit, and its synergetic mechanism, which is also proved to be an excellent candidate for next-generation optoelectronics. This review summarizes the structural, optical, and transport features of MoS2. Then the working mechanisms and figures of merit are explored for the MoS2 detector. Further, the detector modulation strategies are introduced in detail about layer-number engineering and chemical doping engineering. Afterward, the recent heterostructure assembling strategies (MoS2/nD, n=0,1,2,3) of detector architectures are classified based on flexible van der Waals assembling. Finally, the future direction of MoS2 photodetectors is discussed, which can be delivered as a feasible guideline in two-dimensional photodetector and integrated circuit fields.

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