R. Miglani, Reema Gupta, Anjali Sharma, M. Tomar, A. Chowdhuri
{"title":"以SiO2为缓冲层的Ba1−xSrxTiO3薄膜基x波段选择性共面波导微波谐振器","authors":"R. Miglani, Reema Gupta, Anjali Sharma, M. Tomar, A. Chowdhuri","doi":"10.1557/s43578-023-01118-2","DOIUrl":null,"url":null,"abstract":"Open-circuited coplanar waveguide (OC-CPW)-based filters have many applications in microwave and transmission line circuits. CPW-based resonant structure with ferroelectric thin film provides advantages including small size, light weight, tunable frequency, etc. The purpose of the current work is to fabricate the novel design of X-band (8.2–12.4 GHz) microwave resonator on thin film of Barium Strontium Titanate (Ba0.5Sr0.5TiO3 or BST) on bare silicon (Si) substrate with and without silicon dioxide (SiO2) as buffer layer. The pattern of microwave resonator has been successfully designed using conventional UV-photolithography technique on Pulsed Laser Deposition (PLD)-grown thin films of BST. The resonating frequencies with minimum return loss of devices fabricated on BST/Si and BST/SiO2/Si substrate recorded as 7.8 GHz and 10.02 GHz, respectively. The resonating frequency of microwave resonator on BST/SiO2/Si substrate lies in X-band region. OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si","PeriodicalId":14079,"journal":{"name":"International Journal of Materials Research","volume":"8 1","pages":"4009 - 4021"},"PeriodicalIF":0.7000,"publicationDate":"2023-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ba1−xSrxTiO3 thin-film-based X-band selective coplanar waveguide microwave resonator using SiO2 as buffer layer\",\"authors\":\"R. Miglani, Reema Gupta, Anjali Sharma, M. Tomar, A. Chowdhuri\",\"doi\":\"10.1557/s43578-023-01118-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Open-circuited coplanar waveguide (OC-CPW)-based filters have many applications in microwave and transmission line circuits. CPW-based resonant structure with ferroelectric thin film provides advantages including small size, light weight, tunable frequency, etc. The purpose of the current work is to fabricate the novel design of X-band (8.2–12.4 GHz) microwave resonator on thin film of Barium Strontium Titanate (Ba0.5Sr0.5TiO3 or BST) on bare silicon (Si) substrate with and without silicon dioxide (SiO2) as buffer layer. The pattern of microwave resonator has been successfully designed using conventional UV-photolithography technique on Pulsed Laser Deposition (PLD)-grown thin films of BST. The resonating frequencies with minimum return loss of devices fabricated on BST/Si and BST/SiO2/Si substrate recorded as 7.8 GHz and 10.02 GHz, respectively. The resonating frequency of microwave resonator on BST/SiO2/Si substrate lies in X-band region. OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si\",\"PeriodicalId\":14079,\"journal\":{\"name\":\"International Journal of Materials Research\",\"volume\":\"8 1\",\"pages\":\"4009 - 4021\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2023-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Materials Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1557/s43578-023-01118-2\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"METALLURGY & METALLURGICAL ENGINEERING\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43578-023-01118-2","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"METALLURGY & METALLURGICAL ENGINEERING","Score":null,"Total":0}
Ba1−xSrxTiO3 thin-film-based X-band selective coplanar waveguide microwave resonator using SiO2 as buffer layer
Open-circuited coplanar waveguide (OC-CPW)-based filters have many applications in microwave and transmission line circuits. CPW-based resonant structure with ferroelectric thin film provides advantages including small size, light weight, tunable frequency, etc. The purpose of the current work is to fabricate the novel design of X-band (8.2–12.4 GHz) microwave resonator on thin film of Barium Strontium Titanate (Ba0.5Sr0.5TiO3 or BST) on bare silicon (Si) substrate with and without silicon dioxide (SiO2) as buffer layer. The pattern of microwave resonator has been successfully designed using conventional UV-photolithography technique on Pulsed Laser Deposition (PLD)-grown thin films of BST. The resonating frequencies with minimum return loss of devices fabricated on BST/Si and BST/SiO2/Si substrate recorded as 7.8 GHz and 10.02 GHz, respectively. The resonating frequency of microwave resonator on BST/SiO2/Si substrate lies in X-band region. OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si
期刊介绍:
The International Journal of Materials Research (IJMR) publishes original high quality experimental and theoretical papers and reviews on basic and applied research in the field of materials science and engineering, with focus on synthesis, processing, constitution, and properties of all classes of materials. Particular emphasis is placed on microstructural design, phase relations, computational thermodynamics, and kinetics at the nano to macro scale. Contributions may also focus on progress in advanced characterization techniques. All articles are subject to thorough, independent peer review.