Zhikun Wang, Shuhao Yang, Saijun Mao, Xi Lu, Hongping Ma, Hongyao Liu
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引用次数: 0
摘要
碳化硅功率半导体器件近年来在电力电子领域得到了广泛的应用。然而，由于SiC MOSFET的开关速度快，因此与Si IGBT相比，实现精确的开关特性是一个挑战。本文首先分析了影响SiC MOSFET开关特性精度的因素。漏源电压(Vds)和电流(Id)的信号零偏、Vds和Id之间的时间延迟、被测设备的采样频率和采样带宽都是导致测量精度不准确的原因。此外，还提出了一种基于SiC MOSFET开关特性的方法。基于1200V/600ASiC MOSFET功率模块和45m$ ω $ SiC MOSFET分立器件的实验结果验证了分析和模型的正确性。
Factors Influencing the Accuracy of Switching Characterization for SiC MOSFET
Silicon Carbide (SiC) power semiconductor device has been used in power electronics in recent years. However, it is a challenge to achieve accurate switching characterization of SiC MOSFET than Si IGBT due to its fast switching speed. Firstly, this paper analyzed the factors influencing the accuracy of switching characterization for SiC MOSFET. It is found that the signal zero bias of drain-source voltage (Vds) and current (Id), the time delay between Vds and Ids, sampling frequency and sampling bandwidth of measured equipments all lead to the inaccuracy. Moreover, a method based on SiC MOSFET switching behavior is proposed. The analysis and the model are validated from the experimental results based on a 1200V/600ASiC MOSFET power module and a 45m$\Omega$ SiC MOSFET discrete.
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