线后端集成硅注入HfO2铁电存储器的纳秒激光退火(NLA)

L. Grenouillet, T. Francois, J. Coignus, S. Kerdilès, N. Vaxelaire, C. Carabasse, F. Mehmood, S. Chevalliez, C. Pellissier, F. Triozon, F. Mazen, G. Rodriguez, T. Magis, V. Havel, S. Slesazeck, F. Gaillard, U. Schroeder, T. Mikolajick, E. Nowak
{"title":"线后端集成硅注入HfO2铁电存储器的纳秒激光退火(NLA)","authors":"L. Grenouillet, T. Francois, J. Coignus, S. Kerdilès, N. Vaxelaire, C. Carabasse, F. Mehmood, S. Chevalliez, C. Pellissier, F. Triozon, F. Mazen, G. Rodriguez, T. Magis, V. Havel, S. Slesazeck, F. Gaillard, U. Schroeder, T. Mikolajick, E. Nowak","doi":"10.1109/VLSITechnology18217.2020.9265061","DOIUrl":null,"url":null,"abstract":"10nm Si-implanted HfO<inf>2</inf> is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled <tex>$.28\\mu \\mathrm{m}^{2}$</tex>. capacitors demonstrate excellent endurance (10<sup>9</sup> cycles measured at 4 V, extrapolated to be 10<sup>12</sup> at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO<inf>2</inf>- based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO<inf>2</inf>.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"39 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroelectric Memories Integrated in Back-End Of Line (BEOL)\",\"authors\":\"L. Grenouillet, T. Francois, J. Coignus, S. Kerdilès, N. Vaxelaire, C. Carabasse, F. Mehmood, S. Chevalliez, C. Pellissier, F. Triozon, F. Mazen, G. Rodriguez, T. Magis, V. Havel, S. Slesazeck, F. Gaillard, U. Schroeder, T. Mikolajick, E. Nowak\",\"doi\":\"10.1109/VLSITechnology18217.2020.9265061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"10nm Si-implanted HfO<inf>2</inf> is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled <tex>$.28\\\\mu \\\\mathrm{m}^{2}$</tex>. capacitors demonstrate excellent endurance (10<sup>9</sup> cycles measured at 4 V, extrapolated to be 10<sup>12</sup> at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO<inf>2</inf>- based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO<inf>2</inf>.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"39 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSITechnology18217.2020.9265061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

摘要

将10nm si注入的HfO2首次集成到130nm的BEOL CMOS中,证明其具有铁电性。按比例缩小的美元。28 \μ\ mathrm {m} ^{2} $。电容器表现出优异的续航能力(在4v下测量109次,在3V下推断为1012次),在晶圆尺度上具有紧密的顽固性场分布,在85°C下具有出色的数据保留能力。为了扩大10nm或更薄的HfO2基薄膜的铁电BEOL兼容性,也为了了解它们的结晶动力学,纳秒激光退火被证明是非常有吸引力的,即使是未掺杂的HfO2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroelectric Memories Integrated in Back-End Of Line (BEOL)
10nm Si-implanted HfO2 is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled $.28\mu \mathrm{m}^{2}$. capacitors demonstrate excellent endurance (109 cycles measured at 4 V, extrapolated to be 1012 at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO2- based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO2.
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