单回路形式因素\(H\rightarrow \gamma^*\gamma^*\)在\(R_{\xi}\)压力表

K. H. Phan, D. Tran
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引用次数: 0

摘要

本文给出了在\(R_{\xi}\)规范中\(H\右row \gamma^*\ gamma^*\)的一般单环形式因子,考虑了最终光子的两个上壳层、一个上壳层和两个离壳层的所有情况。计算在标准模型和任意超出标准模型下进行,其中带电标量粒子可以在单环图中交换。形状因子的解析结果以Passarino-Veltman函数的一般形式表示。我们还证实了先前的计算结果,这些结果适用于两个上壳光子的情况。还讨论了与结果的\(\xi\)无关性。我们发现数值结果在\(\xi=0,1\)和$\xi\右行\ inty \)变化时具有很好的稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
One-loop Form Factors for \(H\rightarrow \gamma^*\gamma^*\) in \(R_{\xi}\) Gauge
In this paper, we present general one-loop form factors for \(H\rightarrow \gamma^* \gamma^*\) in \(R_{\xi}\) gauge, considering all cases of two on-shell, one on-shell and two off-shell for final photons. The calculations are performed in standard model and in arbitrary beyond the standard models which charged scalar particles may be exchanged in one-loop diagrams. Analytic results for the form factors are shown in general forms which are expressed in terms of the Passarino-Veltman functions. We also confirm the results in previous computations which are available for the case of two on-shell photons. The \(\xi\)-independent of the result is also discussed. We find that numerical results are good stability with varying \(\xi=0,1\) and $\xi\rightarrow \infty\).
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