基于GaN微加工的紫外MSM光电探测器

A. Muller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, A. Stavrinidis, D. Vasilache, C. Buiculescu, I. Petrini, C. Anton, D. Dascalu, A. Kostopoulos
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引用次数: 8

摘要

本文介绍了利用纳米光刻技术获得的氮化镓膜支撑MSM光电探测器结构的制造和表征。采用不同的MSM结构尺寸和不同的GaN膜厚度制备了两种不同的MSM光电探测器,并对探测器的性能进行了分析。非常低的暗电流和意想不到的高值,在50-100 A/W的范围内为紫外探测器的响应性已经获得。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultraviolet MSM photodetector based on GaN micromachining
This paper presents the manufacturing and the characterization of GaN membrane supported MSM photodetector structures obtained by means of nanolithographic techniques. Two different runs of MSM photodetectors, with different dimensions of the MSM structures and different GaN membrane thickness, have been performed and the detectors performances are annalised. Very low dark currents and unexpected high values, in the range of 50-100 A/W for the UV detectors responsivity have been obtained.
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